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| LESHAN RADIO COMPANY, LTD. Small-Signal Switching Diode * Silicon Epitaxial Planar Diode * Fast switching Diode; especially suited for applications requiring high voltage capability LSD2004LT1 3 1 2 SOT- 23 DEVICE MARKING LSD2004LT1=DB5 1 ANODE 3 CATHODE MAXIMUM RATINGS AND THERMAL CHARACTERISTICS Characteristic Continuous Reverse Voltage Reverse Breakdown Voltage (I R= 100uA) Reverse Voltage Leakage Current (V R= 240V) (V R= 240V,Tj=150C) Forward Voltage (I F = 20 mA) (I F = 100 mA) Reverse Recovery Time (I F =30 mA ,Irr=3.0 mA) Capacitance (VF =VR = 0,F=1MHZ) Forward Current (continuous) VF VF Trr C 870 1000 50 5.0 Symbol VR V(BR) MIN 240 300 Max Unit V V IR IR 100 100 nA uA mV mV mV ns pF IF 225 mA LSD2004LT1-1/2 LESHAN RADIO COMPANY, LTD. LSD2004LT1 SOT-23 NOTES: A L 3 1 V G 2 BS 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. DIM A B C D G H J K L S V MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 0.0034 0.0140 0.0350 0.0830 0.0177 INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0070 0.0285 0.0401 0.1039 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 C D H K J PIN 1. BASE 2. EMITTER 3. COLLECTOR 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm LSD2004LT1-2/2 |
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